Title :
Shallow junction and contact realization by diffusion of heavily doped polycrystalline-germanium for Ge devices
Author :
Kezheng Li ; Yu Hongyu ; Kok Hoe Kong ; Gamble, Harold ; McNeill, David ; Armstrong, Mark
Author_Institution :
Dept. of Electr. & Electron. Eng., South Univ. of Sci. & Technol. of China, Shenzhen, China
Abstract :
In conclusion, a unique method to achieve high quality shallow n+/p junction by out-diffusion of phosphorus from poly-Ge has been demonstrated. The technology and key issues of poly-Ge deposition by LPCVD is presented. Results shown from diode I-V characteristics indicate feasibility of poly-Ge used for junction and contact realization.
Keywords :
chemical vapour deposition; diffusion; elemental semiconductors; germanium; heavily doped semiconductors; p-n junctions; phosphorus; semiconductor growth; Ge devices; Ge:P; LPCVD; contact realization; diode I-V characteristics; heavily doped polycrystalline-germanium; high quality shallow n+/p junction; phosphorus out-diffusion; Decision support systems; Fabrication; Junctions; Q measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874673
