Title :
Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method
Author :
Tsukamoto, Tadaaki ; Hirose, Naoki ; Kasamatsu, Akifumi ; Mimura, Takashi ; Matsui, Takashi ; Suda, Yoshiyuki
Author_Institution :
Grad. Sch. of Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan
Abstract :
The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.
Keywords :
electrical resistivity; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; sputter deposition; surface morphology; Ge; Si; Si (001) substrates; electrical resistivity; high DC power sputtering; layer formation; sputter epitaxy method; surface morphology; Agriculture; Bars; Educational institutions; Epitaxial growth; Silicon; Sputtering; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874675
