DocumentCode :
1779267
Title :
Use of X-ray techniques in the development and production of novel transistor structures
Author :
Hikavyy, Andriy ; Rosseel, Erik ; Witters, L. ; Mertens, Hans ; Ryan, Paul ; Langer, Robert ; Loo, Roger
Author_Institution :
Imec, Leuven, Belgium
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
39
Lastpage :
40
Abstract :
X-ray techniques are indispensable tools for characterization of strained layers during different stages of process development and integration. Even when precise information cannot be obtained in some cases, in combination with other techniques it gives a fast and important feedback.
Keywords :
X-ray diffraction; X-ray reflection; field effect transistors; X-ray techniques; field effect transistors; strained layers; Business; Decision support systems; Electronic mail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874676
Filename :
6874676
Link To Document :
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