Title :
Impact of Sn incorporation on low temperature growth of polycrystalline-Si1−xGex layers on insulators
Author :
Yamaha, Takashi ; Ohmura, Takuma ; Kurosawa, Masashi ; Takeuchi, Wataru ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
The incorporation of Sn into Si1-xGex layer effectively enhances the crystallization at low temperature annealing. However, Sn precipitation occurs in Si1-x-yGexSny with a high Sn content of 10% and the grain size in the poly-Si1-x-yGexSny is as small as the Si1-xGex case. On the other hand, the grain size of Si1-x-yGexSny with a Sn content of 2% grows larger than the Si1-xGex case, which leads to increasing the hole mobility of poly-Si1-x-yGexSny.
Keywords :
Ge-Si alloys; annealing; crystallisation; grain size; hole mobility; molecular beam epitaxial growth; precipitation; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; Si1-x-yGexSny; crystallization; grain size; hole mobility; insulators; low temperature annealing; low temperature growth; polycrystalline layers; precipitation;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874679
