Title :
Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers
Author :
Kurosawa, Masashi ; Kato, Masaaki ; Yamaha, Takashi ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki
Author_Institution :
Nagoya Univ., Nagoya, Japan
Abstract :
Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.
Keywords :
Raman spectra; annealing; crystallisation; semiconductor growth; semiconductor materials; semiconductor thin films; silicon compounds; tin; crystallization temperature; direct transition semiconductor; insulating layers; low temperature growth; polycrystalline layers; polycrystalline materials; temperature 150 degC; Annealing; Crystallization; Raman scattering; Silicon; Spectroscopy; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874680
