Title :
Broadband III-V on silicon hybrid superluminescent LEDs by quantum well intermixing and multiple die bonding
Author :
De Groote, A. ; Peters, J.D. ; Davenport, M.L. ; Heck, M.J.R. ; Baets, R. ; Roelkens, G. ; Bowers, J.E.
Author_Institution :
ECE Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
Combining quantum well intermixing and multiple die bonding a broadband superluminescent III-V on silicon LED was realized. Balancing four LEDs with different band gaps resulted in 292nm 3dB bandwidth and an on-chip power of -8dBm.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; microassembling; semiconductor quantum wells; silicon; superluminescent diodes; Si-InP; band gaps; broadband III-V on silicon hybrid superluminescent LED; multiple die bonding; on-chip power; quantum well intermixing; Absorption; Bandwidth; Broadband communication; Light emitting diodes; Optical waveguides; Photonic band gap; Silicon;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995345
