Title :
Impact of crystalline structure on electrical property of NiGe/Ge contact
Author :
Yunsheng Deng ; Nakatsuka, Osamu ; Taoka, Noriyuki ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We can control the crystalline structure of NiGe layer on Ge(110) by controlling the deposition method, surface cleaning, and annealing temperature. We also investigated the impact of the interface crystalline structures on the electrical properties of NiGe/Ge(110) contacts. We found that thermal cleaning of Ge surface improves on the interfacial structure of the epitaxial NiGe/Ge(110) contact, that leads to lowering SBH.
Keywords :
annealing; crystal structure; elemental semiconductors; germanium; germanium alloys; interface structure; metallic epitaxial layers; nickel alloys; semiconductor-metal boundaries; surface cleaning; vacuum deposition; Ge; Ge(110) surface; NiGe-Ge; annealing; crystalline structure; electrical property; epitaxial contact; interfacial structure; surface cleaning; thermal cleaning; Cleaning; Educational institutions; Electronic mail; Facsimile; Grain boundaries; Lattices; Nickel;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874682
