Title :
Chlorine- and Fluorine-based dry etching of Germanium-Tin
Author :
Yuan Dong ; Dian Lei ; Xin Xu ; Wei Wang ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
Cl- and F- based dry etching of Ge1-xSnx were presented in this work. High selectivity of Ge1-xSnx over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnFx layer at Ge1-xSnx surface. Addition of O2 to CF4 can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge1-xSnx samples.
Keywords :
chlorine; etching; fluorine; germanium alloys; tin alloys; Ge1-xSnx; chlorine-based dry etching; etch rate selectivity; etching conditions; fluorine-based dry etching; nonvolatile etching products; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874686
