• DocumentCode
    1779287
  • Title

    Chlorine- and Fluorine-based dry etching of Germanium-Tin

  • Author

    Yuan Dong ; Dian Lei ; Xin Xu ; Wei Wang ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    Cl- and F- based dry etching of Ge1-xSnx were presented in this work. High selectivity of Ge1-xSnx over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnFx layer at Ge1-xSnx surface. Addition of O2 to CF4 can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge1-xSnx samples.
  • Keywords
    chlorine; etching; fluorine; germanium alloys; tin alloys; Ge1-xSnx; chlorine-based dry etching; etch rate selectivity; etching conditions; fluorine-based dry etching; nonvolatile etching products; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874686
  • Filename
    6874686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779287