DocumentCode :
1779288
Title :
Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides
Author :
Arai, Tamio ; Chong Liu ; Ohta, Atsushi ; Makihara, Katsunori ; Miyazaki, S.
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
123
Lastpage :
124
Abstract :
Mn-Nanodots with an areal dot density as high as ~2.4×1011 cm-2 and an average diameter of ~14 nm were fabricated on EB evaporated SiOx by remote H2 plasma treatment. The embedding of Mn-nanodots in SiOx was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.
Keywords :
electrical conductivity transitions; electrical resistivity; electron beam deposition; manganese; nanofabrication; nanostructured materials; silicon compounds; vacuum deposition; EB evaporated SiOx; ON-OFF ratio; Si-rich oxides; SiOx:Mn; areal dot density; embedded Mn-nanodots; remote H2 plasma treatment; resistive switching; Business; Decision support systems; Educational institutions; Electronic mail; Laboratories;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874687
Filename :
6874687
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779288
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