• DocumentCode
    1779288
  • Title

    Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides

  • Author

    Arai, Tamio ; Chong Liu ; Ohta, Atsushi ; Makihara, Katsunori ; Miyazaki, S.

  • Author_Institution
    Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    Mn-Nanodots with an areal dot density as high as ~2.4×1011 cm-2 and an average diameter of ~14 nm were fabricated on EB evaporated SiOx by remote H2 plasma treatment. The embedding of Mn-nanodots in SiOx was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.
  • Keywords
    electrical conductivity transitions; electrical resistivity; electron beam deposition; manganese; nanofabrication; nanostructured materials; silicon compounds; vacuum deposition; EB evaporated SiOx; ON-OFF ratio; Si-rich oxides; SiOx:Mn; areal dot density; embedded Mn-nanodots; remote H2 plasma treatment; resistive switching; Business; Decision support systems; Educational institutions; Electronic mail; Laboratories;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874687
  • Filename
    6874687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779288