DocumentCode :
1779289
Title :
Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates
Author :
Asano, Takashi ; Terashima, Tomohide ; Yamaha, Takashi ; Kurosawa, Masashi ; Takeuchi, Wataru ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
159
Lastpage :
160
Abstract :
We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.
Keywords :
germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon compounds; ternary semiconductors; Ge; Ge(001) substrates; Ge1-x-ySixSny; compressive strained layers; crystalline properties; crystalline structure; epitaxial growth; misfit strain; strain direction; unstrained layers; Lattices; Rough surfaces; Strain; Substrates; Surface morphology; Surface roughness; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874688
Filename :
6874688
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779289
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