DocumentCode
1779296
Title
Si-Ge-Sn heterostructures: Growth and applications
Author
Buca, Dan ; Wirths, Stephan ; Stange, Daniela ; Tiedemann, Andreas T. ; Mussler, Gregor ; Ikonic, Zoran ; Chiussi, S. ; Hartmann, J.M. ; Grutzmacher, D. ; Mantl, Siegfried
Author_Institution
Peter Grunberg Inst. 9 & JARA - FIT, Forschungszentrum Juelich, Grunberg, Germany
fYear
2014
fDate
2-4 June 2014
Firstpage
163
Lastpage
164
Abstract
This study presents the synthesis of a SiGeSn buffer layer by reduced pressure CVD method. Band structure calculation and transmission electron microscopy are used for material characterization. The use of this heterostructure for MOSFET and MOS capacitor fabrication is also addressed.
Keywords
Ge-Si alloys; MOS capacitors; MOSFET; band structure; buffer layers; chemical vapour deposition; semiconductor growth; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; tin alloys; transmission electron microscopy; MOS capacitor; MOSFET; SiGeSn; band structure; buffer layer; heterostructures; reduced pressure CVD; transmission electron microscopy; Decision support systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874691
Filename
6874691
Link To Document