DocumentCode
1779298
Title
Novel Si-Ge-C superlattices and their applications
Author
Augusto, Carlos J. R. P. ; Forester, Lynn
Author_Institution
Quantum Semicond., San Jose, CA, USA
fYear
2014
fDate
2-4 June 2014
Firstpage
15
Lastpage
16
Abstract
With the Si-Ge-C SLs described in this paper, the bandgap nature (indirect/direct) and magnitude, as well as the band offsets relative to Si, can be varied significantly across the entire infra-red spectrum, depending on the SL composition and periodicity, and also on surface orientation. Devices that until now have required compound semiconductors are now possible to implement with Si-Ge-C SLs, which are compatible with standard CMOS processing.
Keywords
germanium compounds; infrared spectra; semiconductor superlattices; silicon compounds; SL composition; SiGeC; band offsets; compound semiconductors; infra-red spectrum; periodicity; superlattices; surface orientation; CMOS integrated circuits; Films; Metals; Photonic band gap; Silicon; Superlattices; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874692
Filename
6874692
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