Title :
Ge and GaAs integration for device applications
Author :
Ching-Kean Chia ; Iskander, Aneesa ; Yuanbing Cheng ; Jin Yunjiang ; Dalapati, Goutam Kumar ; Qiuwei, Terry Zhuo
Author_Institution :
Inst. of Mater. Res. & Eng., Agencyfor Sci., Technol. & Res., Singapore, Singapore
Abstract :
We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor epitaxial layers; semiconductor growth; GaAs; Ge; Ge substrate; Ge-GaAs; device applications; epilayer; integration; materials characteristics; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874693
