DocumentCode
1779300
Title
Ge and GaAs integration for device applications
Author
Ching-Kean Chia ; Iskander, Aneesa ; Yuanbing Cheng ; Jin Yunjiang ; Dalapati, Goutam Kumar ; Qiuwei, Terry Zhuo
Author_Institution
Inst. of Mater. Res. & Eng., Agencyfor Sci., Technol. & Res., Singapore, Singapore
fYear
2014
fDate
2-4 June 2014
Firstpage
87
Lastpage
88
Abstract
We have investigated the integration of Ge and GaAs, for both GaAs epilayer grown on Ge substrate, and Ge epilayer grown on GaAs substrate. The materials characteristics were studied and several technical issues were addressed. An example of device application for these material system has been presented, which shows excellent results that have combined benefits from both Ge and GaAs.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor epitaxial layers; semiconductor growth; GaAs; Ge; Ge substrate; Ge-GaAs; device applications; epilayer; integration; materials characteristics; Decision support systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874693
Filename
6874693
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