Title :
High electron mobility n-channel Ge MOSFETs with sub-nm EOT
Author :
Toriumi, A. ; Choong Hyun Lee ; Cimang Lu ; Nishimura, T.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.
Keywords :
MOSFET; elemental semiconductors; germanium; high electron mobility transistors; oxidation; planarisation; Ge; gate stack formation; germanium interface; high-electron mobility n-channel germanium MOSFET; oxidation kinetics; p-channel FET; sub-nm EOT; surface planarization kinetics; thermodynamics; Electron mobility; Field effect transistors; Logic gates; Oxidation; Rough surfaces; Scattering; Surface roughness;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874697
