Title :
Thermal chemical vapor deposition of epitaxial germanium tin alloys
Author :
Yihwan Kim ; Yi-Chiau Huang ; Sanchez, E. ; Chu, S.
Author_Institution :
Appl. Mater., Inc., Sunnyvale, CA, USA
Abstract :
A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.
Keywords :
boron; chemical vapour deposition; electrical resistivity; germanium alloys; metallic epitaxial layers; semiconductor epitaxial layers; semiconductor growth; silicon alloys; tin alloys; GeSiSn; GeSn:B; boron doping; epitaxial films; epitaxial germanium tin alloys; film resistivity; pseudomorphic growth; reduced pressure thermal chemical vapor deposition chamber; underlayer;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874699
