• DocumentCode
    1779313
  • Title

    Thermal chemical vapor deposition of epitaxial germanium tin alloys

  • Author

    Yihwan Kim ; Yi-Chiau Huang ; Sanchez, E. ; Chu, S.

  • Author_Institution
    Appl. Mater., Inc., Sunnyvale, CA, USA
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    161
  • Lastpage
    162
  • Abstract
    A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.
  • Keywords
    boron; chemical vapour deposition; electrical resistivity; germanium alloys; metallic epitaxial layers; semiconductor epitaxial layers; semiconductor growth; silicon alloys; tin alloys; GeSiSn; GeSn:B; boron doping; epitaxial films; epitaxial germanium tin alloys; film resistivity; pseudomorphic growth; reduced pressure thermal chemical vapor deposition chamber; underlayer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874699
  • Filename
    6874699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779313