Title :
Strained germanium nanowire MOSFETs
Author :
Ikeda, Ken-ichi ; Kamimuta, Y. ; Moriyama, Y. ; Ono, M. ; Oda, Masaomi ; Irisawa, T. ; Tezuka, Taro
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Tecnology (AIST), Tsukuba, Japan
Abstract :
Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μeff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10-9A/μm at Vd = -0.5 V) were achieved among scaled (sub-100nm Lg) Ge MOSFET for the device with the Lg of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.
Keywords :
MOSFET; elemental semiconductors; germanium; hole mobility; nanowires; 2-step Ge-condensation technique; Ge; compressive strain; hole mobility; off-current; pFET channel; strained germanium nanowire MOSFET; Aluminum oxide; Logic gates; MOSFET; Nanoscale devices; Strain; Strain measurement; Wires;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874704
