Title :
Strained Ge microbridges to obtain a direct bandgap laser
Author :
Geiger, Richard ; Suess, M.J. ; Bonzon, C. ; Spolenak, R. ; Faist, J. ; Sigg, Hans
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
Abstract :
Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.
Keywords :
elemental semiconductors; germanium; internal stresses; micro-optics; Ge; direct bandgap laser; group IV materials; light emission; opto-electronic platform; strain method; strained microbridges; Doping; Optical device fabrication; Photonic band gap; Photonics; Silicon; Strain;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874706
