Author :
Olivier, S. ; Malhouitre, S. ; Kopp, C. ; Ben Bakir, B. ; Descos, A. ; Bordel, D. ; Menezo, S. ; Fedeli, J.-M. ; Duan, G.-H. ; Kaspar, P. ; Jany, C. ; Le Liepvre, A. ; Accard, A. ; Make, D. ; Girard, N. ; Levaufre, G. ; Shen, A. ; Charbonnier, P. ; Mallec
Author_Institution :
Leti, CEA, Grenoble, France
Abstract :
We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode III-V/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in excess of 3 mW.
Keywords :
III-V semiconductors; elemental semiconductors; laser tuning; optical transmitters; semiconductor lasers; silicon; wafer bonding; wavelength division multiplexing; Si; hybrid III-V lasers; laser tuning; molecular wafer bonding; monomode III-V/Si laser; wavelength division multiplexing; Fiber lasers; Laser modes; Laser tuning; Optical fibers; Optical transmitters; Silicon;
