DocumentCode :
1779363
Title :
Planar InAs p-i-n photodiodes fabricated using ion implantation
Author :
White, Benjamin S. ; Sandall, Ian ; Chee Hing Tan
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
352
Lastpage :
353
Abstract :
We present a process for fabricating Planar InAs APDs through Be implantation. Fabrication details are discussed in addition to current-voltage, responsivity and gain measurements taken from the diodes.
Keywords :
beryllium; indium compounds; ion implantation; p-i-n photodiodes; semiconductor doping; Be implantation; InAs:Be; current-voltage measurement; gain measurements; ion implantation; planar InAs p-i-n photodiodes; responsivity; Annealing; Dark current; Implants; Ion implantation; Photodiodes; Semiconductor diodes; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6995393
Filename :
6995393
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779363
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