DocumentCode :
1779494
Title :
Room-temperature electroluminescence from Ge/Ge0.92Sn0.08/Ge double heterostructure LED on Si
Author :
Yiyin Zhou ; Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Greg ; Margetis, Joe ; Tolle, John ; Naseem, Hameed A. ; Shui-Qing Yu
Author_Institution :
Microelectron.-Photonics, Univ. of Arkansas, Fayetteville, AR, USA
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
506
Lastpage :
507
Abstract :
Room temperature electroluminescence (EL) from Ge/Ge0.92Sn0.08/Ge double heterostructure light-emitting diodes has been observed. Spectrum measurements show an emission peak at 0.601eV, which is attributed to direct bandgap transition.
Keywords :
electroluminescence; elemental semiconductors; germanium; light emitting diodes; Ge-Ge0.92Sn0.08-Ge; LED; direct bandgap transition; double heterostructure light-emitting diodes; emission peak; room temperature electroluminescence; spectrum measurements; temperature 293 K to 298 K; Current density; Educational institutions; Electroluminescence; P-i-n diodes; Photonic band gap; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6995471
Filename :
6995471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779494
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