DocumentCode :
1779537
Title :
Room temperature electrically injected In0.4Ga0.6N/GaN quantum-dot visible (λ=620 nm) single photon source
Author :
Deshpande, Saniya ; Frost, Thomas ; Hazari, Arnab Shashi ; Bhattacharya, Pallab
Author_Institution :
Electr. Eng. & Comput. Sci, Univ. of Michigan- Ann Arbor, Ann Arbor, MI, USA
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
548
Lastpage :
549
Abstract :
In this work, we have obtained electrically driven single photon emission from In0.4Ga0.6N quantum dots emitting in the red spectral range (λ=620 nm) at room temperature.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum dot lasers; In0.4Ga0.6N-GaN; electrical injection; electrically driven single photon emission; quantum dots; red spectral range; room temperature; temperature 293 K to 298 K; Correlation; Photoluminescence; Photonics; Plasma temperature; Quantum dots; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6995493
Filename :
6995493
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779537
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