DocumentCode
1779551
Title
Silicon-on-insulator (SOI) nanowire hot carrier electroluminescence
Author
Du Plessis, Monuko ; Venter, Petrus J.
Author_Institution
Dept. of Electr., Univ. of Pretoria, Tshwane, South Africa
fYear
2014
fDate
12-16 Oct. 2014
Firstpage
562
Lastpage
563
Abstract
Hot carrier electroluminescence under avalanching conditions in SOI nanowire pn junctions are investigated. Of interest is the spectral content of the light emission, as well as the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to bulk silicon.
Keywords
electroluminescence; hot carriers; nanowires; p-n junctions; silicon-on-insulator; SOI nanowire pn junctions; Si; avalanching conditions; hot carrier electroluminescence; light emission; light extraction efficiency; magnitude improvement; silicon-on-insulator; spectral content; CMOS integrated circuits; Electric fields; Electroluminescence; Hot carriers; Junctions; Photonics; Silicon; SOI; hot carriers; nanowire; silicon electroluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2014 IEEE
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/IPCon.2014.6995500
Filename
6995500
Link To Document