A Novel ESD Protection Circuit for Passive RFID Transponder

Author

Jianguo Hu ; Ge Lin ; Zhikui Duan ; Deming Wang ; Jin Wu

Author_Institution

Sun Yat-sen Univ., Guangzhou, China

fYear

2014

fDate

28-30 Nov. 2014

Firstpage

252

Lastpage

256

Abstract

This paper presents silicon proved ESD protection circuit for RFID transponder using 180nm CMOS process. The circuit can also be reused for the functions of rectifier and amplitude limiter. Such method not only reduces RFID transponder´s area but also enhances the ESD level remarkably. The test results show that it can provide 8kV human body mode (HBM) ESD protection ability which is especially useful during the manufacturing, transporting and packaging of RFID tag chip.

Keywords

CMOS integrated circuits; electrostatic discharge; passive networks; radiofrequency identification; silicon; transponders; CMOS process; ESD protection circuit; HBM ESD protection ability; RFID tag chip; amplitude limiter; electrostatic discharge; human body mode; passive RFID transponder; radiofrequency identification; rectifier function; silicon; size 180 nm; voltage 8 kV; Electrostatic discharges; Logic gates; MOS devices; Radiofrequency identification; Rectifiers; Resistance; Substrates; ESD; RFID tags; limiter;

fLanguage

English

Publisher

ieee

Conference_Titel

Digital Home (ICDH), 2014 5th International Conference on

Conference_Location

Guangzhou

Print_ISBN

978-1-4799-4285-5

Type

conf

DOI

10.1109/ICDH.2014.55

Filename

6996770

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1781409