High speed silicon-based optoelectronic devices on 300mm platform

Author

Vivien, L. ; Marris-Morini, D. ; Virot, L. ; Perez-Galacho, D. ; Rasigade, G. ; Hartmann, J.-M. ; Cassan, Eric ; Crozat, P. ; Olivier, S. ; Baudot, C. ; Boeuf, F. ; Fedeli, J.-M.

Author_Institution

Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2014

fDate

6-10 July 2014

Firstpage

1

Lastpage

4

Abstract

Silicon-based photonics has generated a strong interest in recent years, mainly for optical telecommunications and optical interconnects in microelectronic circuits. The main rationales of silicon photonics are the reduction of photonic system costs and the increase of the number of functionalities on the same integrated chip by combining photonics and electronics. In this paper, we will present recent results on 40 Gbit/s optical modulators based on carrier depletion effect and germanium photodetectors integrated in silicon on insulator (SOI) waveguides. Both optoelectronic devices were fabricated on 300 mm platform. The achieved performances constitute a new milestone towards new generations of several Tbs/s chips merging electronics and photonics.

Keywords

electro-optical modulation; elemental semiconductors; integrated optics; optical communication equipment; optical waveguides; optoelectronic devices; photodetectors; silicon; silicon-on-insulator; Si; bit rate 40 Gbit/s; carrier depletion effect; germanium photodetectors; high speed silicon-based optoelectronic devices; optical modulators; silicon on insulator waveguides; size 300 mm; High-speed optical techniques; Integrated optics; Optical device fabrication; Optical modulation; Optical waveguides; Silicon; Silicon photonics; germanium photodetectors; silicon modulators;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2014 16th International Conference on

Conference_Location

Graz

Type

conf

DOI

10.1109/ICTON.2014.6876536

Filename

6876536