DocumentCode
1782148
Title
SI/PI Co-simulation including voltage regulating circuitry for high-performance multi-chip package
Author
JuHwan Lim ; Jongjoo Lee ; SoYoung Jung
Author_Institution
Samsung Electron., Hwasung, South Korea
fYear
2014
fDate
12-16 May 2014
Firstpage
366
Lastpage
369
Abstract
As new NAND specification such as Toggle 2.0 has been standardized and developed, supply voltage has been reduced from 3.3V to 1.8V because of the adoption of high-speed I/O. Accordingly, due to issues of the backward compatibility with previous specifications and the power budget, voltage regulator implemented in a package should supply the power to the I/Os. In this paper, we propose the advanced SI/PI co-simulation methodology including voltage regulator circuitry for high-performance multi-chip packages. It is shown that the proposed simulation can detect the vulnerability of PDN related to the output of voltage regulator in the design stage of high-perfomance multi-chip packages, and can help optimize PCB design including PDN. It is also shown that the simulation are in good agreement with measurements.
Keywords
multichip modules; printed circuit design; voltage regulators; NAND specification; PCB design; high-performance multichip package; voltage regulating circuitry; voltage regulator; Flash memories; Integrated circuit modeling; Jitter; Regulators; Semiconductor device measurement; Silicon; Voltage control; low drop out (LDO); multi-chip package (MCP); power distribution network (PDN); redistribution layer (RDL);
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, Tokyo (EMC'14/Tokyo), 2014 International Symposium on
Conference_Location
Tokyo
Type
conf
Filename
6997171
Link To Document