Crosstalk reduction in TSV arrays with direct ohmic contact between metal and silicon-substrate

In response to the requirement of novel crosstalk-reduction scheme for high density through silicon via(TSV) interconnects in silicon interposer, this paper presents a structure and performance analysis of through-silicon via(TSV) with direct ohmic contact between a ground TSV and silicon substrate for coupling mitigation purposes. We further expand the structure to a 3×3 TSV array and investigate its cross-talk performance. The simulation results show that the signaling scheme, which uses direct ohmic contact for ground TSVs, can effectively reduce the crosstalk and coupling noise between signal TSVs than the conventional design.