Title :
Improvement of ESD robustness in gallium nitride-based flip-chip HEMT by introducing metal-insulator-metal capacitor
Author :
Ping-Yu Kuei ; Nan-Hung Cheng ; Yung-Fang Chen ; Yi-Cherng Ferng ; Das, Atanu ; Shu-Liang Lin ; Ching-Chi Lin ; Liann-Be Chang
Author_Institution :
Dept. of Electr. & Electron. Eng. Chung, Nat. Defense Univ., Taoyuan, Taiwan
Abstract :
We report on improvement of ESD characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) using metal-insulator-metal (MIM) structure aluminium nitride (AlN) flip-chip (FC) submount. Compared with FC-free HEMT, measured results of the FC HEMT show the improvements of 25 and 150% under drain-to-source and gate-to-source electrostatic discharge (ESD) stress respectively, which is attributed to an extra path formed in the MIM structure AlN FC submount to flow the ESD current and to support the charge by the additional capacitances.
Keywords :
III-V semiconductors; MIM devices; aluminium compounds; electrostatic discharge; flip-chip devices; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; ESD robustness; MIM structure flip-chip FC submount; drain-to-source electrostatic discharge stress; flip-chip HEMT; gate-to-source electrostatic discharge stress; high-electron mobility transistor; metal-insulator-metal capacitor; Aluminum gallium nitride; Electrostatic discharges; Gallium nitride; HEMTs; Logic gates; Robustness; Stress; AlGaN/GaN; AlN; Capacitor; ESD; Flip-Chip; HEMT;
Conference_Titel :
Electromagnetic Compatibility, Tokyo (EMC'14/Tokyo), 2014 International Symposium on
Conference_Location :
Tokyo
