Improvement of ESD robustness in gallium nitride-based flip-chip HEMT by introducing metal-insulator-metal capacitor

Author

Ping-Yu Kuei ; Nan-Hung Cheng ; Yung-Fang Chen ; Yi-Cherng Ferng ; Das, Atanu ; Shu-Liang Lin ; Ching-Chi Lin ; Liann-Be Chang

Author_Institution

Dept. of Electr. & Electron. Eng. Chung, Nat. Defense Univ., Taoyuan, Taiwan

fYear

2014

fDate

12-16 May 2014

Firstpage

721

Lastpage

724

Abstract

We report on improvement of ESD characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) using metal-insulator-metal (MIM) structure aluminium nitride (AlN) flip-chip (FC) submount. Compared with FC-free HEMT, measured results of the FC HEMT show the improvements of 25 and 150% under drain-to-source and gate-to-source electrostatic discharge (ESD) stress respectively, which is attributed to an extra path formed in the MIM structure AlN FC submount to flow the ESD current and to support the charge by the additional capacitances.

Keywords

III-V semiconductors; MIM devices; aluminium compounds; electrostatic discharge; flip-chip devices; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; ESD robustness; MIM structure flip-chip FC submount; drain-to-source electrostatic discharge stress; flip-chip HEMT; gate-to-source electrostatic discharge stress; high-electron mobility transistor; metal-insulator-metal capacitor; Aluminum gallium nitride; Electrostatic discharges; Gallium nitride; HEMTs; Logic gates; Robustness; Stress; AlGaN/GaN; AlN; Capacitor; ESD; Flip-Chip; HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, Tokyo (EMC'14/Tokyo), 2014 International Symposium on

Conference_Location

Tokyo

Type

conf

Filename

6997239