DocumentCode :
1782608
Title :
Millisecond infrared laser irradiation of SiOxNy: the role of nitrogen in the photoluminescence emission
Author :
Ruggeri, Rosa ; Mannino, Giovanni ; Sciuto, Antonella ; Romano, Lucia ; Neri, Ferrante ; Privitera, Vittorio
Author_Institution :
IMM, Catania, Italy
fYear :
2014
fDate :
12-15 Oct. 2014
Firstpage :
31
Lastpage :
33
Abstract :
We investigated the role of Nitrogen in the luminescence emission of amorphous SiOxNy layers irradiated by Infrared Laser. Variable content of Nitrogen (0-22%) has been obtained by magnetron sputtering or plasma enhanced chemical vapor deposition techniques. We demonstrate that emission is obtained from the amorphous matrix and the emission peak shifts towards longer wavelengths with increasing the N concentration. The peak shift is associated with the formation of O-Si-N chemical combinations. In contrast, no red shift was observed when N is absent.
Keywords :
amorphous state; laser beam annealing; nitrogen; photoluminescence; plasma CVD; silicon compounds; sputter deposition; SiOxNy; amorphous nitrogen doped silicon dioxide layers; laser annealing; magnetron sputtering; millisecond infrared laser irradiation; photoluminescence emission; plasma enhanced chemical vapor deposition; Density measurement; Heating; Power lasers; Power system measurements; Silicon; SiOxNy; chemical vapor deposition; laser annealing; photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th
Conference_Location :
Aci Castello
Type :
conf
DOI :
10.1109/NMDC.2014.6997414
Filename :
6997414
Link To Document :
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