Germanium condensation for co-integration: strain study by dark-field electron holography

Author

Boureau, Victor ; Benoit, Daniel ; Warot, Benedicte ; Hytch, Martin J. ; Claverie, Alain

Author_Institution

CEMES, Univ. de Toulouse, Toulouse, France

fYear

2014

fDate

12-15 Oct. 2014

Firstpage

34

Lastpage

36

Abstract

We study the strain characteristics of thin SiGe layers on insulator processed by the germanium condensation technique. We perform dark-field electron holography measurements and show the relation between strain and Ge content in the layers. The characteristics of the condensation process are discussed for the realization of co-integrated MOS structures.

Keywords

Ge-Si alloys; MIS structures; condensation; deformation; electron holography; semiconductor materials; semiconductor-insulator boundaries; Ge content; SiGe; co-integrated MOS structures; dark-field electron holography measurements; germanium condensation technique; strain characteristics; thin SiGe layers; Area measurement; Diffraction; Electron microscopy; Semiconductor device measurement; Silicon; Thickness measurement; CMOS process; Germanium condensation; Holography; Silicon germanium; Silicon-on-insulator; Strain measurement; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th

Conference_Location

Aci Castello

Type

conf

DOI

10.1109/NMDC.2014.6997415

Filename

6997415