Title :
A Cascaded Distributed Amplifier Operating Up to 110 GHz Using SiGe HBTs
Author :
Yihu Li ; Goh Wang Ling ; Yong-Zhong Xiong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A cascade distributed amplifier (DA) is designed and analyzed in this letter. The proposed DA is fabricated in 0.13 μm SiGe HBTs process and patterned ground micro-strips are deployed for the design of distributed inductors to achieve high-Q in the transmission line (TL). In addition, negative resistors and capacitors are used to widen the bandwidth. Gain boosting techniques are also used to ensure gain flatness throughout the band. The fabricated DA achieves an average gain of 17.5 dB and 14.5 dB gain at 110 GHz. 7.5 and 2.7 dBm saturated output power are obtained at 50 and 100 GHz, respectively. The total chip size is 0.8 mm × 1.8 mm, including the bond pads.
Keywords :
Ge-Si alloys; distributed amplifiers; heterojunction bipolar transistors; microstrip lines; millimetre wave amplifiers; millimetre wave bipolar transistors; semiconductor materials; transmission lines; DA; HBT process; SiGe; TL; bond pads; capacitors; cascaded distributed amplifier; distributed inductor design; frequency 100 GHz; frequency 50 GHz; gain boosting techniques; negative resistors; patterned ground microstrips; size 0.13 mum; transmission line; Bandwidth; Gain; Inductors; Power generation; Q-factor; Scattering parameters; Silicon germanium; Cascade; DA; HBT; SiGe; gain boosting;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2342874
