• DocumentCode
    17828
  • Title

    Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells

  • Author

    Choi, P.H. ; Baek, D.H. ; Kim, H.J. ; Kim, Kwang Soon ; Park, H.S. ; Kim, S.S. ; Choi, B.D.

  • Author_Institution
    Sungkyunkwan University, Republic of Korea
  • Volume
    49
  • Issue
    24
  • fYear
    2013
  • fDate
    November 21 2013
  • Firstpage
    1561
  • Lastpage
    1562
  • Abstract
    Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (JSC) and conversion efficiency (??) were improved over standard cells when the ZnS buffer layer was deposited in the H2O2-added chemical solution. Otherwise, the fill-factor and ?? were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se2 absorption layer.
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.1146
  • Filename
    6680435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=17828