Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells

Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J_SC) and conversion efficiency (??) were improved over standard cells when the ZnS buffer layer was deposited in the H₂O₂-added chemical solution. Otherwise, the fill-factor and ?? were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se₂ absorption layer.