Evidence of lateral coupling phenomenon in self-assembled InAs/InP(001) quantum dots characterized by photoluminescence spectroscopy (PLS)

Author

Besahraoui, F. ; Bouslama, M. ; Ghafour, M. ; Lounis, Z. ; Hamaida, K.

Author_Institution

Dept. of Phys.-Chem., Mater. Lab. “LABMAT”, Oran, Algeria

fYear

2014

fDate

26-27 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of self-assembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.

Keywords

III-V semiconductors; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; InAs-InP; InP; MBE; PLS; PPL; QD; QI; excitation density; ground state; isotropic quantum dot shape; lateral coupling; molecular beam epitaxy; optoelectronic properties; polarized photoluminescence spectroscopy; self-assembled quantum dot; self-assembled quantum island; Couplings; Indium phosphide; Photoluminescence; Quantum dot lasers; Quantum dots; Stationary state; Substrates; ground state; lateral coupling; photoluminescence; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Dielectric Materials for Photovoltaic Systems (NAWDMPV), 2014 North African Workshop on

Conference_Location

Tlemcen

Print_ISBN

978-1-4799-6502-1

Type

conf

DOI

10.1109/NAWDMPV.2014.6997602

Filename

6997602