Title :
2D numerical simulation for InGaP/GaAs HBT safe operating area
Author :
Bo-Rong Lin ; Tao, Nick G. M. ; Lee, Chien-Ping ; Henderson, Tim ; Lin, Barry J. F.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hydrodynamics; impact ionisation; indium compounds; technology CAD (electronics); 2D numerical simulation; HBT; HBT safe operating area; InGaP-GaAs; SOA boundary regime; TCAD tool; failure mechanism; heterojunction bipolar transistor; hydrodynamic transport; impact ionization; self-heating model; two-dimensional technology computer-aided design; Analytical models; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Junctions; Kirk field collapse effect; Semiconductor optical amplifiers; HBT; TCAD; safe operating area; simulation;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997776
