2D numerical simulation for InGaP/GaAs HBT safe operating area

Author

Bo-Rong Lin ; Tao, Nick G. M. ; Lee, Chien-Ping ; Henderson, Tim ; Lin, Barry J. F.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.

Keywords

III-V semiconductors; failure analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hydrodynamics; impact ionisation; indium compounds; technology CAD (electronics); 2D numerical simulation; HBT; HBT safe operating area; InGaP-GaAs; SOA boundary regime; TCAD tool; failure mechanism; heterojunction bipolar transistor; hydrodynamic transport; impact ionization; self-heating model; two-dimensional technology computer-aided design; Analytical models; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Junctions; Kirk field collapse effect; Semiconductor optical amplifiers; HBT; TCAD; safe operating area; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997776

Filename

6997776