Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance

Author

Mustafa, Albara ; Raphael, Sommet ; Raymond, Quere

Author_Institution

XLIM Univ. de Limoges, Brive-la-Gaillarde, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

9

Lastpage

12

Abstract

The thermal impedance of Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) has been characterized using the “3ω method”. We already demonstrated in a previous work that, subject to certain conditions, the voltage oscillation at the third harmonic is the real image of the thermal impedance of the device. In this work, we propose both a theoretical approach to understand the limitation of the 3ω test bench and a comparison with measurements especially when power HEMTs are used as the resistance to be measured.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; thermal resistance measurement; wide band gap semiconductors; 3ω method; 3ω test bench; GaN; GaN HEMT; gallium nitride based high electron mobility transistors; power HEMT; thermal impedance; third harmonic; voltage oscillation; Frequency measurement; Gallium nitride; HEMTs; Impedance; Impedance measurement; MODFETs; Resistors; 3ω method; GaN HEMTs; characterization; thermal impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997778

Filename

6997778