Title :
Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS
Author :
Ren-Jia Chan ; Jyh-Chyurn Guo
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (Ldc~150pH, Qmax ~17, fSR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.
Keywords :
CMOS integrated circuits; inductors; integrated circuit design; integrated circuit modelling; millimetre wave devices; nanoelectronics; proximity effect (lithography); skin effect; Si; circuit simulation; complementary metal oxide semiconductor; frequency dependent resistance; material parameters; millimeter-wave inductor design; nanoscale CMOS; proximity effect; size 65 nm; Analytical models; Eddy currents; Inductors; Metals; Proximity effects; Skin; Skin effect; Analytical model; CMOS; mm-wave inductor; proximity; skin;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997779
