79GHz CMOS power amplifier using temperature compensation bias

Author

Motoyoshi, Mizuki ; Takano, Kyoya ; Yoshida, Takafumi ; Katayama, Kengo ; Amakawa, Shuhei ; Fujishima, Minoru

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

49

Lastpage

52

Abstract

We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100 C with a fixed bias voltage. The PA using temperature compensation bias achieved a small-signal gain of 6.0dB, a 23.5GHz bandwidth and a saturated output power (Psat) of 6.3dBm with 24.8mW power consumption at 100 C.

Keywords

CMOS integrated circuits; compensation; microwave power amplifiers; CMOS power amplifier; bandwidth 23.5 GHz; fixed bias voltage; frequency 79 GHz; gain 6 dB; power 24.8 mW; size 40 nm; temperature 10 degC to 100 degC; temperature 100 degC; temperature compensation bias; CMOS integrated circuits; Logic gates; Power amplifiers; Power demand; Radar; Temperature measurement; Temperature sensors; CMOS; automotive radar; millimeter wave; power amplifier; temperature compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997788

Filename

6997788