A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology

Author

Ben Yishay, Roee ; Elad, Danny

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

53

Lastpage

56

Abstract

A D-Band ×2 frequency multiplier-amplifier chain implemented in a f_T/f_MAX = 200/250GHz 0.12μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.5dBm at 115GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 108GHz to 128GHz (3 dB power bandwidth) with 3dBm input power at V-Band and consumes a total DC power of 600mW. The PA achieves output 1dB compression point and saturated power of 13.3 and 17.1dBm, respectively, at 120GHz and peak small signal gain of 25.5dB.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; frequency multipliers; microwave power amplifiers; BiCMOS technology; D-band power amplifier; SiGe; doubler chain; frequency 108 GHz to 128 GHz; frequency 115 GHz; frequency 120 GHz; frequency 200 GHz; frequency 250 GHz; frequency multiplier-amplifier chain; gain 25.5 dB; input balun; power 600 mW; push-push frequency doubler; size 0.12 mum; Bandwidth; Gain; Impedance matching; Power amplifiers; Power generation; Power measurement; Silicon germanium; D-Band; Frequency Doubler; Millimeter-wave Integrated Circuits; Power Amplifier; SiGe BiCMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997789

Filename

6997789