Title :
A SiGe-based E-band power amplifier with 17.7 dBm output power and 325-GHz GBW
Author :
Furqan, Muhammad ; Ahmed, Foisal ; Stelzer, Andreas
Author_Institution :
Inst. for Commun. Eng. & RF-Syst., Johannes Kepler Univ., Linz, Austria
Abstract :
A high-gain, wideband power amplifier (PA) in 0.18-μm SiGe HBT technology covering the three high-speed E-band communication channels (71-76 GHz, 81-86GHz and 92-95 GHz) is presented. The architecture is based on a class-A three stage cascode amplifier. Bandwidth enhancement is achieved using inter-stage lossy-matching and gain-staggering techniques. The PA demonstrates a peak small-signal gain of 23dB and a saturated output power (Psat) of 17.7 dBm with a 14.8% power-added efficiency (PAE). With a 3-dB gain and Psat bandwidth of about 23GHz, it shows a fractional bandwidth of more than 27%. The PA draws 115mA from a 3.3-V supply.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; impedance matching; millimetre wave power amplifiers; wideband amplifiers; SiGe; SiGe HBT technology; bandwidth enhancement; class-A three stage cascode amplifier; current 115 mA; efficiency 14.8 percent; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; frequency 92 GHz to 95 GHz; gain 23 dB; gain-staggering techniques; high-gain wideband power amplifier; high-speed E-band communication channels; interstage lossy-matching; size 0.18 mum; voltage 3.3 V; Bandwidth; Broadband communication; Frequency measurement; Gain; Impedance; Power generation; Silicon germanium; E-band communication; millimeter-wave circuits; power amplifier; silicon germanium;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997790
