6–12 GHz double-balanced image-reject mixer MMIC in 0.25μm AlGaN/GaN technology

Author

van Heijningen, M. ; Hoogland, J.A. ; de Hek, A.P. ; van Vliet, Frank E.

Author_Institution

Radar Technol. Group, TNO, The Hague, Netherlands

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

65

Lastpage

68

Abstract

The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to GalliumNitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to complete a fully GaN-based front-end. In this paper the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. This design features an integrated LO amplifier and active IF balun. The measured conversion loss is less than 8 dB from 6 to 12 GHz, at 0 dBm LO power.

Keywords

III-V semiconductors; MMIC mixers; aluminium compounds; baluns; gallium arsenide; gallium compounds; low noise amplifiers; microwave power amplifiers; mixers (circuits); wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; GaAs; GaAs components; GaN mixer; TR switches; active IF balun; double-balanced image-reject mixer MMIC; frequency 6 GHz to 12 GHz; front-end circuitry; integrated LO amplifier; low-noise amplifiers; power amplifiers; size 0.25 mum; transceiver modules; Frequency measurement; Gain; Gallium nitride; Impedance matching; MMICs; Mixers; Radio frequency; Gallium Nitride; MMICs; Mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997792

Filename

6997792