DocumentCode :
1783284
Title :
An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules
Author :
Hagiwara, Tomomichi ; Shinjo, Shintaro ; Kagano, Miki ; Taniguchi, E.
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
fYear :
2014
fDate :
6-7 Oct. 2014
Firstpage :
73
Lastpage :
76
Abstract :
In this paper, an L-band transmitter and receiver MMIC, which is known as a core chip for phased array communication and radar applications is presented. The MMIC is fabricated in 0.18 μm SiGe-BiCMOS process, comprises an RX amplifier, a 5-bit active phase shifter, SPDT switches, and a TX amplifier. The RX amplifier realized low noise and high linearity with dual bias-feed techniques. The measurement results show, in receive mode, a gain of 25.5 dB, a noise figure of 1.9 dB, and an input P1dB of -16 dBm in L-band. The MMIC is capable of providing 32 phase states from 0° to 360°, with an RMS phase error of lower than 2.3° and an RMS gain error of lower than 0.5 dB. In transmit mode, the gain of 32 dB, and the saturated output power of 15 dBm are achieved.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC phase shifters; microwave amplifiers; microwave switches; phased array radar; 5-bit active phase shifter; BiCMOS process; L-band BiCMOS core chip MMIC; L-band receiver MMIC; L-band transmitter MMIC; RX amplifier; SPDT switches; SiGe; TX amplifier; dual bias-feed techniques; gain 25.5 dB; gain 32 dB; noise figure 1.9 dB; phased array communication; radar applications; size 0.18 mum; transmit receive modules; Arrays; Gain; L-band; MMICs; Noise measurement; Phase shifters; Power generation; Core chip; L-Band; Phased array; Receiver; SiGe BiCMOS; Transmitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMIC.2014.6997794
Filename :
6997794
Link To Document :
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