DocumentCode :
1783325
Title :
Observation of multiple conduction paths in boron δ-doped diamond structures
Author :
Tumilty, Niall ; Pakpour-tabrizi, Alex ; Jackman, Richard B. ; Lang, Richard
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
fYear :
2014
fDate :
6-7 Oct. 2014
Firstpage :
140
Lastpage :
143
Abstract :
Impedance spectroscopy has been used to investigate the conductivity displayed by diamond doped with boron in an intrinsic-delta doped-intrinsic multilayer system. For a 5nm thick delta layer, it is possible to observe three conduction pathways, which can be individually assigned to transport within the delta layer, and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping and de-trapping processes can be observed, and only at the highest temperature investigated here (673K) can carrier transport due to a single conduction process be seen. Impedance spectroscopy is therefore an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.
Keywords :
boron; carrier mobility; diamond; electric impedance; electrical conductivity; semiconductor doping; spectroscopy; boron δ-doped diamond structure; carrier transport; complex diamond structure electrical characteristic; delta layer; i-layer; impedance spectroscopy; intrinsic-delta doped-intrinsic multilayer system; multiple conduction path; nondestructive tool; size 5 nm; thermal detrapping process; thermal trapping process; Boron; Diamonds; Impedance; Materials; Resistance; Spectroscopy; Temperature measurement; Diamond; Doping; Electronic transport;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMIC.2014.6997811
Filename :
6997811
Link To Document :
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