Title :
Diamond RF power transistors: Present status and challenges
Author :
Kasu, Makoto ; Oishi, Tsukasa
Author_Institution :
Green Electron. Labs., Saga Univ., Saga, Japan
Abstract :
Using the nitrogen dioxide (NO2) adsorption and aluminum oxide (Al2O3) passivation technique, we have solved the thermal instability problem of hydrogen-terminated (H-terminated) diamond field-effect transistors (FETs). The diamond FET showed high maximum IDS of -1.35 A/mm, cut-off frequencies, fT of 35 GHz and fMAX of 70 GHz and RF output power density of 2 W/mm at 1 GHz. The prospects and challenges of diamond RF power transistors will be also discussed.
Keywords :
adsorption; hydrogen; microwave power transistors; nitrogen compounds; passivation; power field effect transistors; Al2O3; FET; NO2; aluminum oxide passivation; diamond RF power transistors; field-effect transistors; frequency 1 GHz; frequency 35 GHz; frequency 70 GHz; nitrogen dioxide adsorption; thermal instability; Aluminum oxide; Diamonds; Field effect transistors; Logic gates; Passivation; Radio frequency; MOSFET; Power; RF; diamond;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997813
