• DocumentCode
    1783330
  • Title

    Diamond RF power transistors: Present status and challenges

  • Author

    Kasu, Makoto ; Oishi, Tsukasa

  • Author_Institution
    Green Electron. Labs., Saga Univ., Saga, Japan
  • fYear
    2014
  • fDate
    6-7 Oct. 2014
  • Firstpage
    146
  • Lastpage
    148
  • Abstract
    Using the nitrogen dioxide (NO2) adsorption and aluminum oxide (Al2O3) passivation technique, we have solved the thermal instability problem of hydrogen-terminated (H-terminated) diamond field-effect transistors (FETs). The diamond FET showed high maximum IDS of -1.35 A/mm, cut-off frequencies, fT of 35 GHz and fMAX of 70 GHz and RF output power density of 2 W/mm at 1 GHz. The prospects and challenges of diamond RF power transistors will be also discussed.
  • Keywords
    adsorption; hydrogen; microwave power transistors; nitrogen compounds; passivation; power field effect transistors; Al2O3; FET; NO2; aluminum oxide passivation; diamond RF power transistors; field-effect transistors; frequency 1 GHz; frequency 35 GHz; frequency 70 GHz; nitrogen dioxide adsorption; thermal instability; Aluminum oxide; Diamonds; Field effect transistors; Logic gates; Passivation; Radio frequency; MOSFET; Power; RF; diamond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMIC.2014.6997813
  • Filename
    6997813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1783330