Title :
Diamond FETs using heterojunction and high-k dielectrics
Author :
Koide, Y. ; Imura, M. ; Liu, Jiangchuan ; Liao, M.Y.
Author_Institution :
Opt. & Electron. Mater. Unit, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba, Japan
Abstract :
In order to control the high-density hole carrier in hydrogenated diamond surface, diamond FETs using AlN/diamond heterojunction structure and high-k gate oxide dielectric are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; diamond; dielectric materials; high electron mobility transistors; wide band gap semiconductors; AlN-C; diamond FET; field effect transistors; heterojunction dielectrics; heterojunction structure; high-k gate oxide dielectric; hole carrier; hydrogenated diamond surface; Diamonds; Hafnium compounds; High K dielectric materials; III-V semiconductor materials; Logic gates; MOSFET; AlN; diamond; dielectric; heterojunction; high-k;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997814
