Title :
90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology
Author :
Shuai Yuan ; Schumacher, Hermann
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
Abstract :
This paper presents a novel bootstrapped frequency doubler, which is used to implement a wideband frequency multiplier-by 8 with balanced differential output. In terms of conversion gain, common mode rejection, and output balance, the proposed frequency doubler achieved better performance than the conventional Gilbert-cell frequency doubler by adopting the proposed bootstrapping technique. Wideband matching was also applied to broaden the bandwidth. The circuit is implemented in 0.13μm SiGe:C BiCMOS and operated from 90-140 GHz with an 8 dB gain variation, a 22dB conversion gain, a -1 to 7 dBm output power, and a power consumption of 250mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; bootstrap circuits; frequency multipliers; low-power electronics; silicon; Si-SiGe; Si-SiGe BiCMOS; SiGe:C; balanced differential output; bootstrapped doubler topology; bootstrapped frequency doubler; common mode rejection; conversion gain; frequency 90 GHz to 140 GHz; frequency octupler; gain 22 dB; gain 8 dB; output balance; power 250 mW; size 0.13 mum; wideband frequency multiplier; wideband matching; BiCMOS integrated circuits; Gain; Harmonic analysis; Power generation; Standards; Topology; Transmission line measurements; Gilbert-cell frequency doubler; MMIC; SiGe; bootstrapped frequency doubler; frequency multiplier; harmonic rejection; multiply by 8; output balance; wideband;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997816