Title :
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects
Author :
Santarelli, Alberto ; Cignani, Rafael ; Niessen, Daniel ; Gibiino, Gian Piero ; Traverso, Pier Andrea ; Di Giacomo, Valeria ; Chang, Carole ; Floriot, D. ; Schreurs, Dominique ; Filicori, Fabio
Author_Institution :
DEI “Guglielmo Marconi”, Univ. of Bologna, Bologna, Italy
Abstract :
A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; FET power performance reduction; FET technologies; III-V technologies; measurement-based performance indicators; nonlinear charge trapping lagging effects; power reduction; size 0.25 mum; Charge carrier processes; Field effect transistors; Gallium nitride; Logic gates; Performance evaluation; Pulse measurements; Field effect transistors; Gallium nitride; Performance evaluation; Pulse measurement;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997826
