Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects

Author

Santarelli, Alberto ; Cignani, Rafael ; Niessen, Daniel ; Gibiino, Gian Piero ; Traverso, Pier Andrea ; Di Giacomo, Valeria ; Chang, Carole ; Floriot, D. ; Schreurs, Dominique ; Filicori, Fabio

Author_Institution

DEI “Guglielmo Marconi”, Univ. of Bologna, Bologna, Italy

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

198

Lastpage

201

Abstract

A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; FET power performance reduction; FET technologies; III-V technologies; measurement-based performance indicators; nonlinear charge trapping lagging effects; power reduction; size 0.25 mum; Charge carrier processes; Field effect transistors; Gallium nitride; Logic gates; Performance evaluation; Pulse measurements; Field effect transistors; Gallium nitride; Performance evaluation; Pulse measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997826

Filename

6997826