• DocumentCode
    1783375
  • Title

    ESA perspective on the industrialisation of European GaN technology for space application

  • Author

    Barnes, A.R. ; Vitobello, F.

  • Author_Institution
    Components Technol. & Space Mater. Div., ESA/ESTEC, Noordwijk, Netherlands
  • fYear
    2014
  • fDate
    6-7 Oct. 2014
  • Firstpage
    233
  • Lastpage
    236
  • Abstract
    This paper reports on the component reliability improvement activities undertaken as part of the European Space Agency (ESA) GREAT2 project, culminating in the first in-orbit demonstration of an X-band telemetry transmitter using European sourced GaN technology.
  • Keywords
    III-V semiconductors; gallium compounds; radio transmitters; space telemetry; wide band gap semiconductors; ESA GREAT2 project; ESA perspective; European Space Agency; European sourced gallium nitride technology industrialisation; GaN; X-band telemetry transmitter; component reliability improvement activities; in-orbit demonstration; space application; Europe; Gallium nitride; Integrated circuit reliability; MMICs; Performance evaluation; Radio frequency; GREAT2; GaN; HEMT; PROBA V; in-orbit demonstration; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMIC.2014.6997835
  • Filename
    6997835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1783375