DocumentCode :
1783375
Title :
ESA perspective on the industrialisation of European GaN technology for space application
Author :
Barnes, A.R. ; Vitobello, F.
Author_Institution :
Components Technol. & Space Mater. Div., ESA/ESTEC, Noordwijk, Netherlands
fYear :
2014
fDate :
6-7 Oct. 2014
Firstpage :
233
Lastpage :
236
Abstract :
This paper reports on the component reliability improvement activities undertaken as part of the European Space Agency (ESA) GREAT2 project, culminating in the first in-orbit demonstration of an X-band telemetry transmitter using European sourced GaN technology.
Keywords :
III-V semiconductors; gallium compounds; radio transmitters; space telemetry; wide band gap semiconductors; ESA GREAT2 project; ESA perspective; European Space Agency; European sourced gallium nitride technology industrialisation; GaN; X-band telemetry transmitter; component reliability improvement activities; in-orbit demonstration; space application; Europe; Gallium nitride; Integrated circuit reliability; MMICs; Performance evaluation; Radio frequency; GREAT2; GaN; HEMT; PROBA V; in-orbit demonstration; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMIC.2014.6997835
Filename :
6997835
Link To Document :
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