50 Watt S-band power amplifier in 0.25 μm GaN technology

Author

van der Bent, Gijs ; de Hek, Peter ; van der Graaf, Marcel ; van Vliet, Frank E.

Author_Institution

TNO, The Hague, Netherlands

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

333

Lastpage

336

Abstract

A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.

Keywords

III-V semiconductors; gallium compounds; integrated circuit design; microwave power amplifiers; power amplifiers; wide band gap semiconductors; GaN; S-band power amplifier; efficiency 65 percent; frequency 3.05 GHz to 3.5 GHz; high power amplifier; output matching design; power 50 W; power 63 W; transistor harmonic load impedance; Frequency measurement; Gallium nitride; Load modeling; Logic gates; Power generation; Semiconductor device measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997860

Filename

6997860