Title :
Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering
Author :
Ture, E. ; Carrubba, V. ; Maroldt, S. ; Muser, M. ; Walcher, H. ; Quay, Ruediger ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper a broadband high-efficiency Class-BJ GaN HEMT-PA for wireless communication applications is realized. Influences of packaging and bond wires on the PA performance are investigated in order to demonstrate and use accurate package models. A novel optimization of bond wires for packaged powerbars is therefore performed and, subsequently a fully characterized PA is effectively designed. For the fully assembled PA module, measurement results demonstrated targeted broadband performance reaching approximately 50% operation bandwidth in the frequency range 1.7-2.8 GHz with 52-59% PAE, 58-66% drain efficiency and 43-44.5 dBm delivered output power while maintaining over 10 dB of GT.
Keywords :
III-V semiconductors; UHF power amplifiers; electronics packaging; gallium compounds; lead bonding; wide band gap semiconductors; wideband amplifiers; GaN; bond wires; broadband high-efficiency Class-BJ GaN HEMT-PA; efficiency 52 percent to 59 percent; efficiency 58 percent to 66 percent; frequency 1.7 GHz to 2.8 GHz; package engineering; packaged powerbars; packaging; wireless communication applications; Broadband amplifiers; Frequency measurement; Gallium nitride; Harmonic analysis; Power amplifiers; Wires; Broadband amplifiers; Class-J; GaN HEMT; packaged powerbars; power amplifiers (PAs);
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997863