• DocumentCode
    1783485
  • Title

    Trends in nanoelectronic education from FDSOI and FinFET technologies to circuit design specifications

  • Author

    Bonnaud, Olivier ; Fesquet, Laurent

  • Author_Institution
    IETR, Univ. of Rennes 1, Grenoble, France
  • fYear
    2014
  • fDate
    14-16 May 2014
  • Firstpage
    106
  • Lastpage
    111
  • Abstract
    With the upcoming FDSOI and FinFET technologies, the gap between education and industry has never been so huge. Indeed, no university is able to provide access to such technologies before the PhD programs. Moreover, the situation is similar when looking the integrated circuit design. The incredible degrees of freedom offered to designers by CAD tools and the need to ever integrate more constraints makes really challenging the design of complex integrated circuits. The universities are facing really difficult issues: designing and fabricating advanced integrated circuits with no real experience in technologies and design techniques. In this context, this paper investigates what we should teach in our nanoelectronics Master curriculum in order to efficiently prepare our students to work in this industry.
  • Keywords
    MOSFET circuits; circuit CAD; computer aided instruction; educational institutions; electronic engineering education; integrated circuit design; nanoelectronics; silicon-on-insulator; CAD tools; FDSOI; FinFET technology; circuit design specifications; complex integrated circuit design; degrees of freedom; design techniques; nanoelectronic education; nanoelectronics master curriculum; universities; Clocks; FinFETs; Logic gates; Routing; Security; Substrates; Microelectronics devices; new generations of decananoscale technologies; pedagogical approach;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Education (EWME), 10th European Workshop on
  • Conference_Location
    Tallinn
  • Type

    conf

  • DOI
    10.1109/EWME.2014.6877406
  • Filename
    6877406