DocumentCode
1783485
Title
Trends in nanoelectronic education from FDSOI and FinFET technologies to circuit design specifications
Author
Bonnaud, Olivier ; Fesquet, Laurent
Author_Institution
IETR, Univ. of Rennes 1, Grenoble, France
fYear
2014
fDate
14-16 May 2014
Firstpage
106
Lastpage
111
Abstract
With the upcoming FDSOI and FinFET technologies, the gap between education and industry has never been so huge. Indeed, no university is able to provide access to such technologies before the PhD programs. Moreover, the situation is similar when looking the integrated circuit design. The incredible degrees of freedom offered to designers by CAD tools and the need to ever integrate more constraints makes really challenging the design of complex integrated circuits. The universities are facing really difficult issues: designing and fabricating advanced integrated circuits with no real experience in technologies and design techniques. In this context, this paper investigates what we should teach in our nanoelectronics Master curriculum in order to efficiently prepare our students to work in this industry.
Keywords
MOSFET circuits; circuit CAD; computer aided instruction; educational institutions; electronic engineering education; integrated circuit design; nanoelectronics; silicon-on-insulator; CAD tools; FDSOI; FinFET technology; circuit design specifications; complex integrated circuit design; degrees of freedom; design techniques; nanoelectronic education; nanoelectronics master curriculum; universities; Clocks; FinFETs; Logic gates; Routing; Security; Substrates; Microelectronics devices; new generations of decananoscale technologies; pedagogical approach;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Education (EWME), 10th European Workshop on
Conference_Location
Tallinn
Type
conf
DOI
10.1109/EWME.2014.6877406
Filename
6877406
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