Title :
Trends in nanoelectronic education from FDSOI and FinFET technologies to circuit design specifications
Author :
Bonnaud, Olivier ; Fesquet, Laurent
Author_Institution :
IETR, Univ. of Rennes 1, Grenoble, France
Abstract :
With the upcoming FDSOI and FinFET technologies, the gap between education and industry has never been so huge. Indeed, no university is able to provide access to such technologies before the PhD programs. Moreover, the situation is similar when looking the integrated circuit design. The incredible degrees of freedom offered to designers by CAD tools and the need to ever integrate more constraints makes really challenging the design of complex integrated circuits. The universities are facing really difficult issues: designing and fabricating advanced integrated circuits with no real experience in technologies and design techniques. In this context, this paper investigates what we should teach in our nanoelectronics Master curriculum in order to efficiently prepare our students to work in this industry.
Keywords :
MOSFET circuits; circuit CAD; computer aided instruction; educational institutions; electronic engineering education; integrated circuit design; nanoelectronics; silicon-on-insulator; CAD tools; FDSOI; FinFET technology; circuit design specifications; complex integrated circuit design; degrees of freedom; design techniques; nanoelectronic education; nanoelectronics master curriculum; universities; Clocks; FinFETs; Logic gates; Routing; Security; Substrates; Microelectronics devices; new generations of decananoscale technologies; pedagogical approach;
Conference_Titel :
Microelectronics Education (EWME), 10th European Workshop on
Conference_Location :
Tallinn
DOI :
10.1109/EWME.2014.6877406