DocumentCode
1783514
Title
A 100W decade bandwidth, high-efficiency GaN amplifier
Author
Custer, James ; Walker, Julian
Author_Institution
Integra Technol., Inc., El Dorado Hills, CA, USA
fYear
2014
fDate
6-7 Oct. 2014
Firstpage
540
Lastpage
543
Abstract
This paper will report a 100W, 100MHz to 1GHz GaN amplifier module having a minimum efficiency of 48% across the whole band with a minimum gain of 14dB. This is believed to be the highest power/efficiency combination yet reported for this frequency range.
Keywords
III-V semiconductors; UHF amplifiers; VHF amplifiers; gallium compounds; wide band gap semiconductors; GaN; GaN amplifier module; decade bandwidth; frequency 100 MHz to 1 GHz; high-efficiency GaN amplifier; power 100 W; power-efficiency combination; Bandwidth; Capacitance; Gallium nitride; Harmonic analysis; Impedance; Logic gates; Transistors; Amplifier; GaN; High-Efficiency; Transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location
Rome
Type
conf
DOI
10.1109/EuMIC.2014.6997913
Filename
6997913
Link To Document