Title :
A 100W decade bandwidth, high-efficiency GaN amplifier
Author :
Custer, James ; Walker, Julian
Author_Institution :
Integra Technol., Inc., El Dorado Hills, CA, USA
Abstract :
This paper will report a 100W, 100MHz to 1GHz GaN amplifier module having a minimum efficiency of 48% across the whole band with a minimum gain of 14dB. This is believed to be the highest power/efficiency combination yet reported for this frequency range.
Keywords :
III-V semiconductors; UHF amplifiers; VHF amplifiers; gallium compounds; wide band gap semiconductors; GaN; GaN amplifier module; decade bandwidth; frequency 100 MHz to 1 GHz; high-efficiency GaN amplifier; power 100 W; power-efficiency combination; Bandwidth; Capacitance; Gallium nitride; Harmonic analysis; Impedance; Logic gates; Transistors; Amplifier; GaN; High-Efficiency; Transistor;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997913
